? 2008 ixys all rights reserved 1 - 2 g 20080806a mmo 140 ixys reserves the right to change limits, test conditions and dimensions. i rms = 140 a v rrm = 800-1600 v v rsm v rrm type v dsm v drm vv 800 800 mmo 140-08io7 1200 1200 mmo 140-12io7 1600 1600 mmo 140-16io7 features ? thyristor controller for ac (circuit w1c acc. to iec) for mains frequency ? isolation voltage 3000 v~ ? planar glass passivated chips ? low forward voltage drop ? lead suitable for pc board solering applications ? switching and control of single and three phase ac circuits ? light and temperature control ? softstart ac motor controller ? solid state switches advantages ? easy to mount with two screws ? space and weight savings ? improved temperature and power cycling ? high power density ? small and light weight symbol conditions maximum ratings i rms t c = 85c, 50 - 400 hz, (per single controller) 130 a i trms 90 a i tavm t c = 85c; 180 sine, per thyristor 58 a i tsm t vj = 45c t = 10 ms (50 hz), sine 1150 a v r = 0 t = 8.3 ms (60 hz), sine 1230 a t vj = 125c t = 10 ms (50 hz), sine 1000 a v r = 0 t = 8.3 ms (60 hz), sine 1070 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 6600 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 6280 a 2 s t vj = 125c t = 10 ms (50 hz), sine 5000 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 4750 a 2 s (di/dt) cr t vj = 125c repetitive, i t = 60 a 150 a/s f = 50 hz, t p = 200 s v d = 2 / 3 v drm i g = 0.45 a non repetitive, i t = i tavm 500 a/s di g /dt = 0.45 a/s (dv/dt) cr t vj = 125c; v dr = 2 / 3 v drm 1000 v/s r gk = ; method 1 (linear voltage rise) p gm t vj = 125c t p = 30 s 10 w i t = i tavm t p = 300 s 5 w p gavm 0.5 w v rgm 10 v t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque (m4) 1.5...2.0/14...18 nm/lb.in. weight typ. 18 g ac controller modules preliminary data data according to iec 60747 and to a single thyristor/diode unless otherwise stated. i / h g / f a n
? 2008 ixys all rights reserved 2 - 2 g 20080806a mmo 140 ixys reserves the right to change limits, test conditions and dimensions. symbol conditions characteristic values i d , i r t vj = 125c; v r = v rrm ; v d = v drm 5ma v t i t = 200 a; t vj = 25c 1.75 v v t0 for power-loss calculations only 0.85 v r t 5.2 m v gt v d = 6 v t vj = 25c 1.5 v t vj = -40c 1.6 v i gt v d = 6 v t vj = 25c 100 ma t vj = -40c 200 ma v gd t vj = 125c; v d = 2 / 3 v drm 0.2 v i gd 10 ma i l t vj = 25c; t p = 10 s 450 ma i g = 0.45 a; di g /dt = 0.45 a/s i h t vj = 25c; v d = 6 v; r gk = ? 200 ma t gd t vj = 25c; v d = ? v drm 2s i g = 0.45 a; di g /dt = 0.45 a/s r thjc per thyristor; dc 0.7 k/w per module 0.35 k/w r thch per thyristor; sine 180 el typ. 0.12 k/w per module typ. 0.06 k/w d s creeping distance on surface 11.2 mm d a creepage distance in air 17.0 mm a max. allowable acceleration 50 m/s 2 10 100 1000 1 10 100 1000 10 0 10 1 10 2 10 3 10 4 0.1 1 10 i g v g ma ma i g 1: i gt , t vj = 125 c 2: i gt , t vj = 25 c 3: i gt , t vj = -40 c s t gd v 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w i gd , t vj = 125 c 3 4 2 1 5 6 limit typ. t vj = 25 c fig. 1 gate trigger characteristics fig. 2 gate trigger delay time dimensions in mm (1 mm = 0.0394")
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